PART |
Description |
Maker |
UL1231 UL1221 |
Wzmacniacz p.cz. z kluczowanARW 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
|
Ultra CEMI
|
UL1201 |
Wzmacniacz p.cz. 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
|
Ultra CEMI
|
M93C46-DS3G_S M93C46-DS3G_W M93C46-DS3P_S M93C46-D |
256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 512 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8 1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIREserial access EEPROM 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE? serial access EEPROM 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE庐 serial access EEPROM 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE垄莽 serial access EEPROM
|
意法半导 STMicroelectronics
|
M24C02-WMN6P M24C02-WBN6P M24C16-RBN6P M24C16-WMN6 |
Enhanced ESD/latch-up protection, More than 40-year data retention 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I2C bus EEPROM
|
STMicroelectronics
|
HYB514171BJ-50- Q67100-Q727 Q67100-Q2021 HYB514171 |
256k x 16-Bit Dynamic RAM 256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存)
|
SIEMENS AG
|
M93S56-125 |
Automotive 4-Kbit, 2-Kbit and 1-Kbit MICROWIRE serial EEPROM with block protection
|
STMicroelectronics
|
IDT71V416S10PHG IDT71V416S10PHGI IDT71V416S12PHG I |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PBGA48 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 10 ns, PDSO44
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
PSD834210MT PSD834210MIT |
Flash PSD / 3.3V Supply / for 8-bit MCUs 2 Mbit 256 Kbit Dual Flash Memories and 64 Kbit SRAM
|
ST Microelectronics
|
29F002B-90 29F002T-12 29F002T-55 29F002T-90 29F002 |
2M-BIT [256K x 8] CMOS FLASH MEMORY 200万位[256K × 8]的CMOS闪存 2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 70 ns, PDIP32
|
Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
|
PDM41028LA10TSOITR PDM41028LA10SOITR PDM41028LA12S |
1 Megabit Static RAM 256K x 4-Bit 1兆位静RAM 256K × 4 1 Megabit Static RAM 256K x 4-Bit 1兆位静态RAM 256K × 4
|
Electronic Theatre Controls, Inc.
|
MR2A16ACYS35 MR2A16AVTS35C MR2A16ACTS35C MR0A16AVY |
256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM 256K x 16位的3.3V异步磁阻随机存取内存
|
飞思卡尔半导体(中国)有限公司 椋???″????浣?涓??)??????
|